Ito substrate with an smooth surface of 0 . 2nm rms roughness measured by afm was obtained by the developed pre - cleaning processing procedure . mbe growth of znsxse1 - x thin films on ito coated glass substrates were carried out using zns and se sources . the xrd 9 / 29 spectra resulted from these films indicated that the as - grown polycrystalline znsxse1 - x thin films had a preferred orientation along the ( 111 ) planes 采用分子束外延技术在ito导电玻璃上低温沉积了zns _ xse _ ( 1 - x )多晶薄膜，详细研究了薄膜制备的工艺参数，在最佳沉积条件下，制备获得了晶型为立方闪锌矿，并具有( 111 )面高度定向生长结构的柱状zns _ xse _ ( 1 - x )多晶薄膜，其rms表面粗糙度最小可达1 . 2nm 。
